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Lasers and solar cells and other semiconductor technologies exist universal laws of extinction
- Aug 05, 2013 -

Lasers and solar cells and other semiconductor technologies exist universal laws of extinction

Previous studies have shown that two-dimensional sheet of carbon graphene have a common light absorption coefficient. According to physicist organizational network recently reported that, now, the US Department of Energy's Lawrence Berkeley National Laboratory scientists have for the first time confirmed that all two-dimensional semiconductor is also generally applicable to a similar simple absorbance law. They use thin films of indium arsenide semiconductor was found that all of the two-dimensional semiconductor, including Ⅲ-Ⅴ compound semiconductor thin-film solar and photovoltaic device that is favored by the industry, there is a general absorption of a photon quantum units, they said to as "AQ". Research papers published in the United States, "National Academy of Sciences".

From the solar cell to the photosensor and then all kinds of lasers and imaging equipment, many of today's semiconductor technology is based on the absorption of light to develop. For quantum well light absorbing nano-scale structures is particularly critical. Quantum well is composed of two different band gap width sheet material microstructure has alternately grown together to form the quantum confinement effect, in which the movement of charge carriers is limited to a two-dimensional plane, the band stepped structure like distribution. We do not need to use the support of thickness can be reduced to 3 nm indium arsenide thin film material as a model system to accurately detect the two-dimensional semiconductor thin film thickness and the electronic band structure of light absorption capacity. & Rdquo; papers corresponding author, scientist at the Lawrence Berkeley National Laboratory, Department of Materials Science and professor at Berkeley in Electrical Engineering and Computer Science from the University of California, said Ali Jarvis, we found that these materials stepped light absorbing material and the thickness ratio band regardless of the configuration.

They indium arsenide thin film printed on an optically transparent substrate made of calcium fluoride, indium arsenide film absorbs light, calcium fluoride substrate is not extinction. Garvey said: so that we can based on the band structure and the thickness of the material to study the properties of light absorption range in thickness between 3 nm to 19 nm films.

With the Advanced Light Source at Berkeley Lab Fourier transform infrared spectroscope, Garvey team at room temperature measured the light absorption transition from one band to the next band when. They observed that, with the stepped transition band of indium arsenide film, AQ values of about 1.7% of the coefficient corresponding incremental or decrement.

This extinction law for all two-dimensional semiconductor seems to be universally applicable. On another paper communications, electrical engineer Eli Norwich Yabu Luo said, our findings deepened the strong quantum confinement of electrons - a basic understanding of the interaction of photons, but also learn how to make two-dimensional semiconductor expansion a novel photonic and optoelectronic applications provide a unique perspective.